Memory Design Engineer

Job Details: Job Description: Intel's Corporate Memory Organization (CMO) within Design Technology Platform (DTP) drives development of Memory Compilers on Intel's leading-edge process technologies.  The organization is responsible for architecting, designing and delivering high-performance and energy-efficient embedded memory IP that maximize silicon performance, optimize density, and maximize manufacturing yield across Intel Products and Intel Foundry platforms. As a Circuit Design Engineer in CMO, you will be responsible for architecting, designing, and delivering SRAM compilers across high-density (HD) and high-performance (HP) profiles.  You will also collaborate with Intel’s Technology Development (TD) group on Design and Technology Co-Optimization (DTCO) to co-define the silicon process and physical layout rules.   Responsibilities of the role include but are not limited to: • Provide industry competitive SRAM design solutions to meet challenging memory design specs for various product segments. • Design, validation, and characterization of Memory Compilers. • Memory Compiler Design Flow and Methodology development.   Behavioral skills/traits as follow: • Interfacing with customers. • Logical thinking, analytical and problem-solving skills. • Verbal/written communication skills. • Interpersonal skills. • Multitasking/prioritization skills.   This is an entry level position, and compensation will be given accordingly. Qualifications: You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the requirements and are considered a plus factor in identifying top candidates. Experience or coursework listed below would be obtained through a combination of your schoolwork and/or classes and/or research and/or relevant previous job and/or internship experiences. This position is not eligible for Intel immigration sponsorship. Minimum Qualifications: • Candidate must have a MS degree with 6+ months of experience in Electrical Engineering or Computer Engineering or related field. • 6+ months of experience in the following: Scripting (Perl or tcl or Python, etc.) • Experience with SRAM operations • Transistor level operation (VLSI course work), design challenges under process variations and low power circuit technique.            Job Type: College Grad Shift: Shift 1 (United States of America) Primary Location: US, Texas, Austin Additional Locations: Posting Statement: All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance. Position of Trust N/A Benefits We offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock bonuses, and benefit programs which include health, retirement, and vacation. Find out more about the benefits of working at Intel .     Annual Salary Range for jobs which could be performed in the US: $91,150.00-172,860.00 USD     The range displayed on this job posting reflects the minimum and maximum target compensation for the position across all US locations. Within the range, individual pay is determined by work location and additional factors, including job-related skills, experience, and relevant education or training. Your recruiter can share more about the specific compensation range for your preferred location during the hiring process.     Work Model for this Role This role will be