Jobs / United States / Renesas Electronics America INC
GaN Technology Development Engineer
Renesas Electronics America INC · 🇺🇸 Hitachinaka, Ibaraki, JP
Sponsorship verdict
Sponsorship possible
One solid signal, not two — worth applying, and worth asking about sponsorship early.
- Employer is on a government sponsor recordThe US Department of Labor certified 56 H-1B/E-3 labor condition applications for this employer between Oct 2025 and Jun 2026 (latest Jun 2026) — the step every H-1B hire needs first. USCIS also records 18 H-1B approvals in FY2023. Source: LCA disclosure data (US Department of Labor (OFLC)).
- The posting doesn’t mention sponsorshipSilence isn’t a refusal — ask the recruiter before investing much time.
- No salary bar for this routeH-1B has no fixed salary bar: the employer must pay at least the prevailing wage for the role and area. Cap-subject employers enter a lottery weighted by wage level. Source: https://www.federalregister.gov/documents/2025/12/29/2025-23853/weighted-selection-process-for-registrants-and-petitioners-seeking-to-file-cap-subject-h-1b, rules effective 2026-02-27.
- What Renesas Electronics America INC paid sponsored hires in similar roles6 certified filings for “Sr. Staff Application Engineer” (Electronics Engineers, Except Computer) in TX: $132k–$180k, median $167k. Most were filed at wage level IV (67%) — 4 lottery entries, ≈61% projected selection odds for cap-subject employers. Source: US Department of Labor LCA disclosure data (Oct 2025 – Jun 2026).
- Confirmed live todayWhen a source last listed this job as open.
US H-1B: cap-subject employers enter a lottery weighted by wage level — Level I gets 1 entry, Level IV gets 4 (DHS projected selection odds ≈15% at Level I to ≈61% at Level IV). Universities and non-profit research employers are cap-exempt. The $100,000 fee for new petitions from abroad is currently blocked by a court order (appeal pending).
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Sponsor Radar — Renesas Electronics America INC
The US Department of Labor certified 56 H-1B/E-3 labor condition applications for this employer between Oct 2025 and Jun 2026 (latest Jun 2026) — the step every H-1B hire needs first. USCIS also records 18 H-1B approvals in FY2023. Source: LCA disclosure data (US Department of Labor (OFLC)).
Past sponsorship or register membership never guarantees sponsorship for this vacancy or for you. Full Sponsor Radar for Renesas Electronics America INC →
About the role
We are seeking GaN Technology Development Engineer to drive next-generation high-efficiency power conversion technologies for emerging applications. In this role, you will participate throughout the full technology and product development cycle, from device concept and architecture development through technology qualification and product launch. Responsible for developing advanced GaN device structures and driving technology development through electrical characterization and data-driven analysis. A major focus will be the technology development including, transistor geometry design, process integration, troubleshooting for process and device-related issues through data analysis, and performing electrical testing to debug and resolve technical challenges. You will also work on new characterization methodologies to investigate device dynamic behavior. The ideal candidate combines device physics knowledge with laboratory testing environment, practical problem-solving skills. Coordinating works across multiple functional teams, including TCAD simulation, process development, reliability test, and product engineering, you will accelerate learning cycles and advance technology readiness for high-volume manufacturing. A key responsibility of this role is to serve as a technical contributor in (1) Device & PCM test structure design (2) Process Integration (3) hand-on device characterization and testing for technical trouble shooting. This is a high-visibility position offering the opportunity to make significant technical and business contributions while helping shape the future of GaN power semiconductor innovation [Must] · B.S. above in Electrical Engineering, Semiconductor Physics/Engineering, or a related technical field w.i 3-7 years of experience in semiconductor device development, characterization, or technology engineering. · Understanding of semiconductor device physics. Experience with power device or SiC or GaN related technology development. · Hands-on experience in electrical characterization and device testing. · English communication skills for technical topic discussion with global teams [Good to have] · Strong problem-solving skills and the ability to independently drive technical investigations. · Understanding of device reliability, degradation mechanisms, and qualification standard. · Similar with semiconductor test equipment, such as parameter analyzers, SMUs/CMUs, curve tracers, oscilloscopes, pulse generators, probe stations. · Analyzing electrical data using Python, JMP, or similar statistical tools. ルネサスは、「To Make Our Lives Easier（人々の暮らしをより豊かで快適にする）」というPurposeのもと、組込み半導体ソリューションを提供するグローバル企業です。世界30か国以上で活躍する21,000人を超えるエンジニアや課題解決のプロフェッショナルとともに、自動車、産業、インフラ、IoT分野における世界最先端のテクノロジー開発に携わり、より安全で、健康的で、環境にやさしく、スマートな未来の実現に貢献しています。 ルネサスでは、「TAGIE（Transparent、Agile、Global、Innovative、Entrepreneurial）」を企業文化の中核としています。TAGIEは、私たちの働き方や成長のあり方、そしてPurposeの実現に向けた取り組みを支える共通の価値観です。この協調的な精神と挑戦するマインドセットが、半導体技術を通じた産業の変革と、世界中の人々の暮らしへの貢献を可能にしています。 私たちは、競争力のある報酬制度に加え、充実した福利厚生をご用意しています。福利厚生の詳細については、選考プロセスの中でご案内いたします。 私たちとともに未来を創造する挑戦に、ぜひ参加しませんか。皆さまからのご応募をお待ちしております。