Senior Principal Engineer

We are seeking a Power Design Engineer to lead the development of test vehicles supporting our high-current BCD (Bipolar-CMOS-DMOS) and low-voltage GaN power process and product portfolios. This role owns test vehicle definition, circuit and layout design, and characterization planning from concept through silicon bring-up, working closely with process development, product engineering, and applications teams. The ideal candidate has hands-on experience designing power devices and circuits at both the IC and module level, and is fluent in the power topologies these test vehicles are ultimately intended to support. Key Responsibilities • Define, design, and drive execution of test vehicles (TVs) for high-current BCD and LV GaN process technologies, including device test structures, scaled power stages, and full-function demonstration circuits. • Translate process capability targets and product roadmap requirements into test vehicle architecture and specifications. • Design and simulate power stage circuits (e.g., synchronous buck/boost, multiphase, half-bridge/DrMOS, gate drivers) used to validate device performance under realistic switching and thermal conditions. • Select and characterize power devices (LDMOS, trench MOSFETs, LV GaN HEMTs, Schottky/sync rectifiers) for inclusion in test structures, working with device/process engineering on layout-dependent tradeoffs (RDS(ON), Qg, breakdown voltage, SOA). • Perform IC-level layout and design for test structures, including parasitic-aware layout for switch nodes, current sensing, and gate drive paths. • Extend designs to module/package level as needed — co-design of power stages with packaging, magnetics, and PCB layout for evaluation boards and system-level test vehicles. • Develop test and characterization plans covering DC parametrics, switching performance, efficiency, transient response, and voltage/current stress margins (including switch-node ringing and abs-max validation). • Lead or support silicon bring-up, debug, and correlation of measured results against simulation and design targets. • Collaborate cross-functionally with process integration, reliability, product/applications engineering, and test engineering to close the loop from process split data to product-ready specifications. • Document design methodology, test vehicle results, and characterization data to support technology qualification and product development decisions. • Bachelor's or Master's degree in Electrical Engineering, Microelectronics, or related field. • 10+ years of hands-on design experience in power semiconductor devices, analog/power ICs, or power electronics. • Strong working knowledge of power conversion topologies (e.g., buck, boost, multiphase/interleaved converters, half-bridge, DrMOS/Intelli-Phase-style architectures) and how topology choices drive device requirements. • Solid understanding of power device physics and tradeoffs across BCD process technologies and GaN (particularly low-voltage GaN HEMTs) — including RDS(ON), switching loss, gate charge, breakdown/avalanche behavior, and thermal characteristics. • Demonstrated experience designing test structures or test chips/vehicles for process technology development (not just product design) — comfortable defining what a process node needs to prove out. • IC-level design and layout experience, including parasitic-sensitive layout practices for high-current switching nodes. • Experience taking designs beyond the die level to module, package, or board level (e.g., power module co-design, evaluation board layout, thermal/electrical co-design). • Proficiency with circuit simulation tools (SPICE or equivalent) and familiarity with device/TCAD simulation concepts. • Ability to interpret and specify absolute maximum ratings,